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This nanowire crossbar memory is emblematic of the future for advanced integrated nanosystems. Utilizing the most recent advances in lithography, fabrication, and manipulation, this integrated system consists of thousands of crossed nanowire switches that store information at their junctions. Information is stored in the form of molecules whose resistance can be reversibly switched to either an "on" (low resistance) or "off" (high resistance) state.
A consortium of researchers organized by the U. S. Government already has demonstrated prototype nanowire nanomemory systems based upon the design shown below. MITRE's role in this consortium was to provide simulation and validation of the architectures and operational characteristics of this and other nanoelectronic devices (click here for papers on this topic). Continued R&D efforts in this area should yield continuously-improving systems capable of advanced computation and highly sensitive detection of biological and chemical molecules.
Below you will also find a list of selected papers that discuss research instrumental in developing this nanomemory system.
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Selected Research on Integrated Nanoelectronic Systems
1) Wu et al., "One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography," Applied Physics A 80, 1173-1178 (2005).
1) DeHon, "Array-Based Architecture for FET-Based, Nanoscale Electronics," IEEE Transactions on Nanotechnology 2, 23-32 (2003).
2) Whang et al., "Large-Scale Hierarchical Organization of Nanowire Arrays for Integrated Nanosystems," Nano Letters 3, 1255-1259 (2003).
3) Melosh et al., "Ultrahigh-Density Nanowire Lattices and Circuits," Science 300, 112-115, (2003).
4) Kwok and Ellenbogen, "Moletronics: Future Electronics," Materials Today 5, 28-37 (2002).
5) Heath et al., "A Defect-Tolerant Computer Architecture: Opportunities for Nanotechnology," Science 280, 1716-1721, (1998).
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